The MIXA450PF1200TSF is a high power IGBT module featuring dual 450 A and 1.2 kV in phase leg topology designed for energy efficiency power conversion and motor control applications. It is available ...

New power modules with solderable pin terminals have changed the structure of inverters in applications up to 20kW. The new EconoPACK+ package was designed to fill the gap between 20kW and 100kW ...

TOKYO--(BUSINESS WIRE)--Mitsubishi Electric Corporation (TOKYO: 6503) announced today that beginning February 15 it will provide samples of its new LV100-type 1.2-kV IGBT module as an industrial-use ...

The MIXD600PF650TSF is a 600-V, 650-A IGBT module in the SimBus-F outline featuring high level of integration with only one power semiconductor module required for the whole drive. It is designed for ...

IRVINE, Calif., May 16, 2011 (GLOBE NEWSWIRE) -- Microsemi Corporation(Nasdaq:MSCC), a leading provider of semiconductor technology aimed at building a smart, secure, connected world, today announced ...

Explore the new IGBT module that features advanced Trench Gate Field Stop technology for efficient power management.

Amongst a flurry of announcements, On Semiconductor has introduced 1.2kV 25, 35, and 50A transfer-moulded IGBT power modules – in converter-inverter-brake (CIB) and converter-inverter (CI) ...

Infineon has introduced a 50kW automotive-qualified IGBT half bridge for electric and hybrid vehicles. Called FF300R08W2P2_B11A, and rated to 230Arms, it includes a pair of 750V IGBTs from the company ...

CYPRESS, Calif.--(BUSINESS WIRE)--Mitsubishi Electric US, Inc. announced a new version of its 2.0kV LV100 insulated-gate bipolar transistor (IGBT) module specifically designed for photovoltaic (PV) ...

Previously, a Power Electronics Technology article titled “Inverted Acoustic System Cuts IGBT Failures” (September 2011) examined the use of an acoustic microscope to image heat-blocking defects such ...